csemi-conaucioi ^pioaucti, una. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u s a mje109 0 .hn , mje109 3 pn p mje2090ri,n,mje209 3 mje1100>h ro mje1103np n MJE2100*,umje210 3 telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 plastic medium-powe r complementar y silico n transistor s designe d fo r us e i n drive r an d outpu t stage s i n complementar y audi o amplifie r applications . ? hig h d c curren t gai n - hp e = 75 0 (mini @ i q * 3. 0 an d 4 0 ad c ? tru e thre e lea d monolithi c constructio n - emitter-bas e resistor s t o preven t leakag e multiplicatio n ar e buil t in . ? availabl e i n tw o package s cas e 9 0 o r cas e 19 9 maximu m rating s therma l characteristic s charmurilti c therma l rniitince . junctio n t o c? m symbo l ?j c pp . powe r dissipatio n watts ) = s k g s s s s s ma i 1. 8 uni t c/ w figur e 1 - powe r deratin g x \ - n n > x n n 2 0 ?l > 6 0 8 0 10 0 12 0 14 0 i n tc . ca5 f temperatur e (c ) 5. 0 amper e darlingto n powe r transistor s complementar y silico n 60-8 0 volt s 7 0 watt s ratin g collector-emitte r voltag e collector-bat e voltag e emitter-bat e voltag e collecto r curren t bei e curren t tota l devic e dunpatio n 9 t c ? 25 c derate abov e 2s c operating en d storag e junctio n temperatm g rang e symbo l vce o vc b ve b ' c i b > 0 t j. t,, , mje10 m mje109 1 mje110 0 mje110 1 mje2ob o mje209 1 mje210 0 mje210 1 6 0 6 0 mje109 2 mje10b 3 mje11o 2 mje11o 3 mje20s 2 mje2ob 3 mje210 2 mje210 3 b o | 8 0 5 0 5 0 0, 1 7 0 05 6 -5 5 to * 15 0 uni t vd c vd c vd c ad c ad c watt! w/ c c mje109 0 mje109 1 mje109 2 mje109 3 mje110 0 mje110 1 mje110 2 mje11o 3 case 90-0 5 mje20s o mje20s 1 mje20s j mj6209 3 MJE2100 . mue210 1 mje210 2 mjej10 3 cas e 199-0 4 n j semi-conductors reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however, n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use , n j semi-conductor s encourage s customer s t o verit y that datasheet s nr e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
mje109 0 thr u mje109 3 pnp/mje110 0 thr u mje110 3 np n (continued ) mje2090thr u mje209 3 pnp/mje210 0 thr u mje210 3 np n electrica l characteristic s it c ' 35 c uni m oth?w ? noted ) chtracwmi e i symbo l mi n of f characteristic s colkctor-ernin v brwkdow n volu?t? l (l c - 10 0 madc , i b -0 1 mje1090 , mje1091 , mje1100 . mje110 1 mje2090 , mje2091 , mj e 2100 . mje210 1 mje1092 , mje1093 , mj61102 . mje110 3 mje2092 , mje2093 , mje2102 , mje210 3 coltkto r cutof f curren t iv ce -30vMJE2100 , mjb210 1 (vc e -4 0 vdc , i b - o v mj e 1093 , mj e 1093 . mj e 1102 , wueiio s mj e 2092 , mje2093 . mj62102 . mje210 3 coll*cw r cutof f curran t (v c b - r*u d bvceq . > e ' 0 ' 6b o 6 0 6 0 8 0 6 0 - - - mi x ] uni t | - : 5o o 50 0 50 0 50 0 0. 2 2. 0 2. 0 vd c uad c rnad c mad c o n characteristic s h i d c curren t gii n (1 c - 3. 0 adc . vc e "3. 0 vdc ) mj e 1090 , mj e 1o92 , mj e 1100 . mj e 110 2 mj e 2090 , mje2092 , MJE2100 . mje210 2 (1 c - 4. 0 adc , v c e - 3. 0 vdc ) mje1091 . mj e 1093 , mje1101 , mj e 110 3 mje2091 . mj e s093 , mje210 v mj e 2 10 3 collktor-emittt r saturatio n voltag * ii c -3. 0 adc , i b - 1 2 madc ) mj e 1090 . mj e 1092 , mj e 1100 , mj e 110 2 mje2090 , mj e 2092 . MJE2100 , mje210 2 (1c - 4. 0 adc , i b " 1 6 madc ) mj e 1091 , mj e 1093 , mj e 1101 , mj e 110 3 vue2091 . mjp2093 . mje2101 . mjejjffi ) ^ bim-emitu r o n valtag t (( c ? 3. 0 adc , v c e -s.ovdc l mj e 1090 , mj e 1092 , mj e 1)00 , mj e 110 2 mje2090 . mje2092 . MJE2100 . mje210 2 d c - 4. 0 adc . vc e ' 3. 0 vdc ) mje1091 . mjei093 . mj e 1 101 , mj e 1 10 3 mje2091 , mje2093 . mje2101 , mje210 3 hf e v cei?i ) v be(on ) 75 0 | _ '5 0 i 75 0 75 0 - - _ -- 2. 5 . _ _2, 5 2. 8 2. 8 2. 5 2. 5 2. b 2. 5 - vd c vd c dynami c characteristic s snull-sign d currtn t gai n d c - 3. 0 adc . vc e - 3. 0 vdc , f - 1 . 0 mhz ) h f . 1. 0 - - <"puli ? t., i pull . widt h < 30 0 ia. dut y cycl * < 20 % figur e 2 - d c saf e operatin g are a _1'.^ _ t ?c?id i bmflt a andirv c'2s ? ur > l y l wi r c tak mi w l i ' ? 1 do m ou t niu d ::i== : t v x - hnitf d t ? k"( - - mj e ion. : ' l = - - mjemoo.!) ! i " mje2ioo.o i ' " mje1w.9 3 1 - - mje2092.j 3 ( ~ ?ucnm.r a i v i ? ? ? = \ r^ ~ =a _ \ a i.a 3. 0 s o it ' th e transisto r tha t mus t b e observe d fo r reliabl e operation , e g , th e transisto r mus t no t b e subjecte d t o greate r dissipatio n tha n th e curve s indicate . a t hig h cas e temperatures , therma l limitation s wil l reduc e th e powe r tha t ca n b e handle d t o value s les s tha n th e limitation s impose d b y secondar y breakdown . (se e an-415 ) e . couecto w emitte r voltag e [volts ! figur e 3 - darlingto n circui t schemati c thr u mje10i 3 ( mjc2m q . thr u 1 mjc2qb 3 . ._ k n? ^ , % 1 0 k r r s ' * 15 0 i 1 t mje11 0 0 sa w 0- 4 thr u mje110 3 mj2100 downloaded from: http:///
mje109 0 thr u mje109 3 pnp/mje110 0 thr u mje110 3 np n (continued ) mje209 0 thr u mje209 3 pnp/mje210 0 thr u mje210 3 np n mj e 109 0 mj e 109 1 mj e 1o9 2 mj e 109 3 mj e 110 0 -* - mj c 110 1 mje 1 1o 2 mj e 1 10 3 ? ? --a - u r * i v i i hg h ^ di m a c d f r , h j k m 'r~ ^ t " 1 ^ 3 milli n mi n 16.1 3 125 7 j.i 8 1.0 9 35 1 ? ? 2.6 7 0.91 3 1 5 1 1 9 "v.?t l , f 0 i i i h 4 eter s ma x 163 8 12.8 3 3.4 3 12 4 3.7 6 bs c 2.9 2 086 4 163 8 2.1 6 m \ k , styl e 2 : pi n 1 . emitte r ! . collecto r 3 . bas e inche s mi n 0.63 5 0.49 5 0.04 3 0.13 8 0.1 8 0.10 5 o.oj 5 0.59 5 9 " 0.07 5 ma x 0.64 5 0.50 5 0.04 9 0.14 8 bs c 0.115 0.03 4 o.m 5 008 5 u b. ? t. ? a.in o.n s ot e 1 lead s withi n 005 " ra o q f t r u e positio n (tpiatmm c cas e 90-0 5 mje209 0 mj e 209 1 mj e 209 2 mje209 3 mj e 2 10 0 mje21o1 ( mje21d 2 mje21o 3 1 . 1 d l b ~%&)!f t j t it r r qlt ~ t t - a k "" " _ i styl e 1 pi m ^^^- f di m a b f d f b h j k l m ^-~ r s t u millimeter s mi n 16.0 8 12.5 7 3 1 8 0.5 1 3.6 1 2.5 4 2.6 7 0.4 3 14.7 3 21 6 3 ? t 4 ? 4.7 8 1.9 1 0.8 1 s.9 9 6.2 2 ma x 163 3 12.8 3 34 3 0.7 6 3.8 6 bs t 2.9 2 0.8 9 14.9 3 2.4 1 w 1 7 3 5.0 3 2.1 6 u.ot i 7.2 4 6.4 8 2 3 m ^ t s j bas e collecto r emitte r inche s ml n 0.63 3 0.49 5 012 5 0.02 0 0.14 2 u 1 0 0.10 s 0.01 7 0.58 0 0.08 5 3 qq m 0. 1 0.1 1 * 7 5 o.oa j 0.27 5 0.24 5 ma x 0.64 3 0.50 s 0 13 5 0.03 0 0.15 2 bs c 0.11 5 0.02 7 0.59 0 0.09 6 ty p q06 b 0.08 5 6.03 4 0.28 5 d.? 5 qi m "g " i s t o cente r lin e o f leads . cas e 199-0 4 downloaded from: http:///
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